无荧光防塌降失水剂KH－931的合成与性能

ＫＨ－９３１是以褐煤、丙烯酰胺、丙烯腈为原料制得的无荧光防塌降失水剂。本文简介了ＫＨ－９３１的合成条件，并对ＫＨ－９３１的防塌作用与降滤失作用进行了室内评定。实验结果表明，ＫＨ－９３１的防塌、降失水效果良好，并具有加量少、无荧光的特点。腐殖酸衍生物，降滤失剂，页岩抑制剂，多功能钻井液处理剂，荧光性，实验室研究     

梯度折射率棒中传播的高斯光束轨迹解析解及其存在条件的讨论

本文提出光束轨迹方程的一般解，导出解析解的存在条件，推广了文献［１］的光线传播理论，文中以一特定梯度折射率棒为例，讨论了高斯光束在棒中的传播特性。     

Trade-off analysis on cost and manufacturing technology of an electronic product: Case study

A trade-off analysis on the cost and system packaging metrics of an electronic product aimed at the commercial/retail industry has been carried out. By comparing the system cost and packaging metrics with those of comparable consumer products, we have determined that there is opportunity for significant cost, size, and weight reduction of the overall electronics packaging system. These include the use of fine pitch IC packages, smaller discrete components, denser PCB wiring technology, double sided IC package surface mount, surface mount connectors, and improved plastics for the product housing. The analysis concluded that PCB area reduction of 40%, using a single PCB instead of three boards, reduction in board cost of over 50% and product weight reduction of over 28% are possible using available technologies.     

微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

OPERATOR-SPLITTING METHOD FOR ANALYSIS OF CAVITATION IN LIQUID-LUBRICATED HERRINGBONE GROOVED JOURNAL BEARING

ＮＯＭＥＮＣＬＡＴＵＲＥｃ　ｒａｄｉａｌｃｌｅａｒａｎｃｅｈ　ｆｉｌｍｔｈｉｃｋｎｅｓｓ ｈ　ｄｉｍｅｎｓｉｏｎｌｅｓｓｆｉｌｍｔｈｉｃｋｎｅｓｓ (ｈ/ｃ)Ｌ/Ｄ　ｒａｔｉｏｏｆｌｅｎｇｔｈｔｏｄｉａｍｅｔｅｒｐ　ｆｉｌｍ ｐｒｅｓｓｕｒｅｅ　ｅｃｃｅｎｔｒｉ     

Effect of Iron on the Color of Barley and Other Cereal Porridges

ABSTRACT: Iron added as ferrous sulfate at 500 mg*kg⁻¹ to rice, oats, whole grain wheat, or proanthocyanidin-free barley porridge caused significant changes in the Hunter "L", "a", and "b" values but the visual appearance of these porridges remained satisfactory. Porridge made with normal barley flour fortified with 500 mg*kg⁻¹ of iron developed an unappealing gray color with ferrous sulfate, ferrous fumarate, or electrolytic iron, 3 salts differing in solubility. At 100 and 250 mg*kg⁻¹ of iron, the discoloration of normal barley porridge was less pronounced, but still objectionable. When fortified with 50 mg*kg⁻¹ of iron, normal barley porridge had a slight color change but was not noticeably gray. Thus barley-containing foods can be fortified with a soluble iron compound at the level of iron used in enriched flour and similar cereal-grain foods for the general population without developing an unattractive color.     

InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

信令网的核心--下一代信令转接点

本文在讨论了下一代信令转接点在满足传统信令网络功能的基础上，着重介绍了下一代的信令转接点上实现的号码携带、灵活路由等新业务，并如何实现传统STP面向下一代网络的平滑过渡。     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

分散图象压缩的遗传算法

基于分形和PIFS函数的特点，提出一种改进的遗传算法用于分形压缩分块的定义域匹配搜索算法。该方法克服了原来分形图象压缩中分类匹配算法固有的局部最优性和随机搜索的缺点，是一种具导引的全局优化的搜索算法。分析和实验表明，该方法的图象压缩比高，解码质量好，若应用遗传算法的并行性，其编码速度也得到提高。